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| BSS84 July 2002 BSS84 P-Channel Enhancement Mode Field Effect Transistor General Description These P-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize onstate resistance, provide rugged and reliable performance and fast switching. They can be used, with a minimum of effort, in most applications requiring up to 0.13A DC and can deliver current up to 0.52A. This product is particularly suited to low voltage applications requiring a low current high side switch. Features * * * -0.13A, -50V. RDS(ON) = 10 @ VGS = -5 V Voltage controlled p-channel small signal switch High density cell design for low RDS(ON) High saturation current * D D S G S SOT-23 G TA=25oC unless otherwise noted Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG TL Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Maximum Power Dissipation Derate Above 25C Parameter Ratings -50 20 (Note 1) Units V V A W mW/C C -0.13 -0.52 0.36 2.9 -55 to +150 300 (Note 1) Operating and Storage Junction Temperature Range Maximum Lead Temperature for Soldering Purposes, 1/16" from Case for 10 Seconds Thermal Characteristics RJA Thermal Resistance, Junction-to-Ambient (Note 1) 350 C/W Package Marking and Ordering Information Device Marking SP Device BSS84 Reel Size 7'' Tape width 8mm Quantity 3000 units 2002 Fairchild Semiconductor Corporation BSS84 Rev B(W) BSS84 Electrical Characteristics Symbol BVDSS BVDSS TJ IDSS IGSS TA = 25C unless otherwise noted Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage. (Note 2) Test Conditions ID = -250 A VGS = 0 V, ID = -250 A,Referenced to 25C VDS = -50 V, VGS = 20 V, VGS = 0 V VDS = 0 V Min Typ -50 -48 Max Units V mV/C Off Characteristics -15 -60 10 A A nA VDS = -50 V,VGS = 0 V TJ = 125C On Characteristics VGS(th) VGS(th) TJ RDS(on) ID(on) gFS Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance VDS = VGS, ID = -1 mA -0.8 ID = -1 mA,Referenced to 25C VGS = -5 V, ID = -0.10 A VGS = -5 V,ID = -0.10 A,TJ=125C VGS = -5 V, VDS = - 10 V VDS = -25V, ID = - 0.10 A -1.7 3 1.2 1.9 -2 V mV/C 10 17 A -0.6 0.05 0.6 S Dynamic Characteristics Ciss Coss Crss RG Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance (Note 2) VDS = -25 V, f = 1.0 MHz V GS = 0 V, 73 10 5 9 pF pF pF VGS = -15 mV, f = 1.0 MHz Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = -30 V, VGS = -10 V, ID = - 0.27A, RGEN = 6 2.5 6.3 10 4.8 5 13 20 9.6 1.3 ns ns ns ns nC nC nC VDS = -25 V, VGS = -5 V ID = -0.10 A, 0.9 0.2 0.3 Drain-Source Diode Characteristics and Maximum Ratings IS VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge VGS = 0 V, IS = -0.26 A(Note 2) -0.8 10 (Note 2) -0.13 -1.2 A V nS nC IF = -0.10A diF/dt = 100 A/s 3 Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) 350C/W when mounted on a minimum pad.. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% BSS84 Rev B(W) BSS84 Typical Characteristics 1 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = -5V -ID, DRAIN CURRENT (A) 0.8 -4.5V 2 -3.5V 1.8 VGS=-3.0V 1.6 1.4 -3.5V 1.2 1 0.8 -4.0V -4.5V -5.0V 0.6 -3.0V 0.4 0.2 -2.5V 0 0 1 2 3 4 5 -VDS, DRAIN TO SOURCE VOLTAGE (V) 0 0.2 0.4 0.6 0.8 1 -ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 5 1.8 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.6 1.4 1.2 1 0.8 0.6 0.4 -50 -25 0 25 50 75 100 o RDS(ON), ON-RESISTANCE (OHM) ID = -0.10A VGS = -5V ID = -0.05A 4 3 TA = 125oC 2 TA = 25oC 1 2 2.5 3 3.5 4 4.5 5 -VGS, GATE TO SOURCE VOLTAGE (V) 125 150 TJ, JUNCTION TEMPERATURE ( C) Figure 3. On-Resistance Variation with Temperature. 1 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 1 TA = -55oC 125oC 25oC -ID, DRAIN CURRENT (A) 0.8 -IS, REVERSE DRAIN CURRENT (A) VDS = -5V VGS = 0V 0.1 TA = 125oC 25oC -55oC 0.001 0.6 0.01 0.4 0.2 0 1 1.5 2 2.5 3 3.5 4 -VGS, GATE TO SOURCE VOLTAGE (V) 0.0001 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. BSS84 Rev B(W) BSS84 Typical Characteristics 5 -VGS, GATE-SOURCE VOLTAGE (V) 100 ID = -0.10A VDS = -8V -25V -30V f = 1 MHz VGS = 0 V 80 CAPACITANCE (pF) CISS 4 3 60 2 40 1 20 COSS CRSS 0 0 0.2 0.4 0.6 0.8 1 0 Qg, GATE CHARGE (nC) 0 10 20 30 40 50 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 1 RDS(ON) LIMIT -ID, DRAIN CURRENT (A) 10ms 0.1 1s DC 0.01 VGS = -5V SINGLE PULSE RJA = 350oC/W TA = 25oC 0.001 1 10 -VDS, DRAIN-SOURCE VOLTAGE (V) 100 100ms 10s 1ms P(pk), PEAK TRANSIENT POWER (W) 5 Figure 8. Capacitance Characteristics. 100us 4 SINGLE PULSE RJA = 350C/W TA = 25C 3 2 1 0 0.01 0.1 1 t1, TIME (sec) 10 100 Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 RJA(t) = r(t) * RJA 0.2 RJA = 350oC/W P(pk) t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 0.1 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1a. Transient thermal response will change depending on the circuit board design. BSS84 Rev B(W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx ActiveArray Bottomless CoolFET CROSSVOLT DOME EcoSPARK E2CMOSTM EnSignaTM FACT FACT Quiet Series FASTa FASTr FRFET GlobalOptoisolator GTO HiSeC I2C Across the board. Around the world. The Power Franchise DISCLAIMER ImpliedDisconnect PACMAN POP ISOPLANAR Power247 LittleFET PowerTrencha MicroFET QFET MicroPak QS MICROWIRE QT Optoelectronics MSX Quiet Series MSXPro RapidConfigure OCX RapidConnect OCXPro SILENT SWITCHERa OPTOLOGICa SMART START OPTOPLANAR SPM Stealth SuperSOT-3 SuperSOT-6 SuperSOT-8 SyncFET TinyLogic TruTranslation UHC UltraFETa VCX FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production Rev. I |
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